Semiconductor memory device with reduced current consumption during standby state
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United States of America Patent
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Feb 1, 2005
Grant Date -
Jul 29, 2004
app pub date -
Jul 25, 2003
filing date -
Jan 29, 2003
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Data indicating whether a short-circuit defect exists in a memory block is programmed a fuse program circuit. In accordance with the fuse program data and a mode instruction signal, the correspondence relationship between a block select signal and a corresponding bit line isolation instruction signal is switched by a circuit that generates the bit line isolation instruction signal in a specific mode. It becomes possible to isolate the memory block in which a leakage current path exists from a corresponding sense amplifier band in a specific operation mode. Current consumption at least at a standby state is reduced.
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