Semiconductor device and method of manufacturing the same
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United States of America Patent
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Feb 8, 2005
Grant Date -
Aug 22, 2002
app pub date -
Oct 2, 2001
filing date -
Dec 19, 2000
priority date (Note) -
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Abstract
The present invention relates to a semiconductor device in which an interlayer insulating film having a low dielectric constant is formed by covering wiring primarily made of a copper film, and to a method of manufacturing the same. In manufacturing the semiconductor device an insulating film having a low dielectric constant is formed on a substrate by converting a film-forming gas into a plasma for reaction. The method includes forming a low-pressure insulating film on the substrate by coverting the film-forming gas at a first gas pressure into a plasma and forming a high-pressure insulating film on the low-pressure insulating film by converting the film-forming gas at second gas pressure, higher than the first gas pressure, into a plasma and reaction.
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