Nitrogen-free antireflective coating for use with photolithographic patterning
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United States of America Patent
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Feb 8, 2005
Grant Date -
May 6, 2004
app pub date -
Nov 4, 2002
filing date -
Nov 4, 2002
priority date (Note) -
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Abstract
A layer of antireflective coating (ARC) material for use in photolithographic processing. In one embodiment the ARC material has the formula Si.sub.w O.sub.x H.sub.y :C.sub.z, where w, x, y and z represent the atomic percentage of silicon, oxygen, hydrogen and carbon, respectively, in the material and where w is between 35 and 55, x is between 35 and 55, y is between 4 and 15, z is between 0 and 3 and the atomic percentage of nitrogen in the material is less than or equal to 1 atomic percent.
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