Thermoelectric material and method of manufacturing the same

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United States of America Patent

PATENT NO 6858154
APP PUB NO 20020026856A1
SERIAL NO

09946755

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A thermoelectric material having large thermoelectric figure of merit is provided. A thin film comprising nanometer-sized particles having their diameters distributing within the range of 0.5 nm though 100 nm both inclusive is formed by depositing the nanometer-sized particles on a substrate, or dispersing the particles in a solid matrix material or solution thereby to form a thin film. In the thin film, a band gap due to quantum confinement effect is generated in each of the particles and electrical conduction occurs by that at least a part of the particles supply carriers. Accordingly, thermal conductivity .kappa. as well as electrical resistivity .rho. and Seebeck coefficient S all of which are factors of thermoelectric figure of merit can be independently controlled, and it is possible to get a thermoelectric material having large dimensionless thermoelectric figure of merit ZT such as beyond 1.5.

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Patent Owner(s)

Patent OwnerAddress
JAPAN AVIATION ELECTRONICS INDUSTRY LIMITED21-1 DOGENZAKA 1-CHOME SHIBUYA-KU TOKYO 1500043 ?1500043

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kataoka, Izumi Tokyo, JP 2 62
Suzuki, Akiko Tokyo, JP 125 1045

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