Process for forming a low dielectric constant fluorine and carbon-containing silicon oxide dielectric material
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United States of America Patent
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Feb 22, 2005
Grant Date -
Aug 29, 2002
app pub date -
Feb 23, 2001
filing date -
Feb 23, 2001
priority date (Note) -
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Abstract
The invention provides a process for forming a low k fluorine and carbon-containing silicon oxide dielectric material by reacting with an oxidizing agent one or more silanes that include one or more organofluoro silanes selected from: (a) an organofluoro silane containing two silicon atoms linked by one oxygen atom; (b) an organofluoro silane containing two silicon atoms linked by one or more carbon atoms, where the one or more carbon atoms each are bonded to one or more fluorine atoms, or to one or more organofluoro moieties, or to a combination thereof; and (c) an organofluoro silane containing a silicon atom bonded to an oxygen atom. The invention also provides a process for forming a low k fluorine and carbon-containing silicon oxide dielectric material by reacting with an oxidizing agent one or more silanes that include one or more organofluoro silanes characterized by the presence of Si--O bonds.
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