Elimination of dendrite formation during metal/chalcogenide glass deposition
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United States of America Patent
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Feb 22, 2005
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N/A
app pub date -
Aug 29, 2003
filing date -
Jun 6, 2002
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Abstract
A method of forming a programmable conductor memory cell array is disclosed wherein metal and chalcogenide glass are co-sputtered to fill an array of cell vias in a prepared substrate. The prepared substrate is heated above room temperature before the metal and chalcogenide glass film is deposited, and the heating is maintained throughout the deposition. The resulting metal/chalcogenide glass film has good homogeneity, a desired ratio of components, and has a regular surface.
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