Semiconductor substrate with trenches for reducing substrate resistance
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United States of America Patent
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Feb 22, 2005
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N/A
app pub date -
Sep 20, 2002
filing date -
Sep 20, 2002
priority date (Note) -
Expired
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Abstract
In one embodiment of the present invention, a method for fabricating semiconductor devices comprises forming an active region about a front-side of a substrate. A plurality of trenches are then formed about a back-side of the substrate. A grid of banks separates the trenches. A conductive material is then applied to the back-side of the substrate. The trenches and the conductive material act to reduce the on-state resistance of the substrate and enhance thermal conductivity, while the grid of banks maintains the structural strength of the wafer.
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