Source side self boosting technique for non-volatile memory
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United States of America Patent
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Feb 22, 2005
Grant Date -
Sep 9, 2004
app pub date -
Mar 5, 2003
filing date -
Mar 5, 2003
priority date (Note) -
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Abstract
A non-volatile semiconductor memory system (or other type of memory system) is programmed in a manner that avoids program disturb. In one embodiment that includes a flash memory system using a NAND architecture, program disturb is avoided by increasing the channel potential of the source side of the NAND string during the programming process. One exemplar implementation includes applying a voltage (e.g. Vdd) to the source contact and turning on the source side select transistor for the NAND sting corresponding to the cell being inhibited. Another implementation includes applying a pre-charging voltage to the unselected word lines of the NAND string corresponding to the cell being inhibited prior to applying the program voltage.
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