| 7,161,833 Self-boosting system for flash memory cells
|
54 |
2004
|
| 7,170,793 Programming inhibit for non-volatile memory
|
22 |
2004
|
| 7,020,026 Bitline governed approach for program control of non-volatile memory
|
37 |
2004
|
| 7,307,884 Concurrent programming of non-volatile memory
|
7 |
2004
|
| 7,450,433 Word line compensation in non-volatile memory erase operations
|
7 |
2004
|
| 6,975,537 Source side self boosting technique for non-volatile memory
|
33 |
2005
|
| 7,295,478 Selective application of program inhibit schemes in non-volatile memory
|
9 |
2005
|
| 7,280,408 Bitline governed approach for programming non-volatile memory
|
9 |
2005
|
| 7,088,621 Bitline governed approach for coarse/fine programming
|
40 |
2005
|
| 7,286,406 Method for controlled programming of non-volatile memory exhibiting bit line coupling
|
5 |
2005
|
| 7,206,235 Apparatus for controlled programming of non-volatile memory exhibiting bit line coupling
|
22 |
2005
|
| 7,486,564 Soft programming non-volatile memory utilizing individual verification and additional soft programming of subsets of memory cells
|
4 |
2005
|
| 7,408,804 Systems for soft programming non-volatile memory utilizing individual verification and additional soft programming of subsets of memory cells
|
53 |
2005
|
| 7,403,424 Erasing non-volatile memory using individual verification and additional erasing of subsets of memory cells
|
10 |
2005
|
| 7,400,537 Systems for erasing non-volatile memory using individual verification and additional erasing of subsets of memory cells
|
7 |
2005
|
| 7,545,675 Reading non-volatile storage with efficient setup
|
4 |
2005
|
| 7,369,437 System for reading non-volatile storage with efficient setup
|
8 |
2005
|
| 7,436,703 Active boosting to minimize capacitive coupling effect between adjacent gates of flash memory devices
|
6 |
2005
|
| 7,362,615 Methods for active boosting to minimize capacitive coupling effect between adjacent gates of flash memory devices
|
11 |
2005
|
| 7,466,590 Self-boosting method for flash memory cells
|
1 |
2005
|
| 7,499,319 Read operation for non-volatile storage with compensation for coupling
|
4 |
2006
|
| 7,436,733 System for performing read operation on non-volatile storage with compensation for coupling
|
17 |
2006
|
| 7,301,812 Boosting to control programming of non-volatile memory
|
6 |
2006
|
| 7,511,995 Self-boosting system with suppression of high lateral electric fields
|
2 |
2006
|
| 7,428,165 Self-boosting method with suppression of high lateral electric fields
|
0 |
2006
|
| 7,515,463 Reducing the impact of program disturb during read
|
6 |
2006
|
| 7,499,326 Apparatus for reducing the impact of program disturb
|
15 |
2006
|
| 7,436,713 Reducing the impact of program disturb
|
7 |
2006
|
| 7,426,137 Apparatus for reducing the impact of program disturb during read
|
7 |
2006
|
| 7,436,709 NAND flash memory with boosting
|
7 |
2006
|
| 7,286,408 Boosting methods for NAND flash memory
|
10 |
2006
|
| 7,457,163 System for verifying non-volatile storage using different voltages
|
28 |
2006
|
| 7,440,331 Verify operation for non-volatile storage using different voltages
|
33 |
2006
|
| 7,450,421 Data pattern sensitivity compensation using different voltage
|
37 |
2006
|
| 7,310,272 System for performing data pattern sensitivity compensation using different voltage
|
61 |
2006
|
| 7,391,650 Method for operating non-volatile memory using temperature compensation of voltages of unselected word lines and select gates
|
4 |
2006
|
| 7,342,831 System for operating non-volatile memory using temperature compensation of voltages of unselected word lines and select gates
|
60 |
2006
|
| 7,492,633 System for increasing programming speed for non-volatile memory by applying counter-transitioning waveforms to word lines
|
3 |
2006
|
| 7,349,261 Method for increasing programming speed for non-volatile memory by applying counter-transitioning waveforms to word lines
|
5 |
2006
|
| 7,489,549 System for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages
|
11 |
2006
|
| 7,486,561 Method for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages
|
4 |
2006
|
| 7,440,326 Programming non-volatile memory with improved boosting
|
11 |
2006
|
| 8,189,378 Reducing program disturb in non-volatile storage
|
0 |
2006
|
| 8,184,478 Apparatus with reduced program disturb in non-volatile storage
|
0 |
2006
|
| 7,977,186 Providing local boosting control implant for non-volatile memory
|
0 |
2006
|
| 7,705,387 Non-volatile memory with local boosting control implant
|
1 |
2006
|
| 7,535,766 Systems for partitioned soft programming in non-volatile memory
|
3 |
2006
|
| 7,499,338 Partitioned soft programming in non-volatile memory
|
6 |
2006
|
| 7,499,317 System for partitioned erase and erase verification in a non-volatile memory to compensate for capacitive coupling
|
0 |
2006
|
| 7,495,954 Method for partitioned erase and erase verification to compensate for capacitive coupling effects in non-volatile memory
|
2 |
2006
|
| 7,691,710 Fabricating non-volatile memory with dual voltage select gate structure
|
0 |
2006
|
| 7,616,490 Programming non-volatile memory with dual voltage select gate structure
|
2 |
2006
|
| 7,586,157 Non-volatile memory with dual voltage select gate structure
|
0 |
2006
|
| 7,596,031 Faster programming of highest multi-level state for non-volatile memory
|
2 |
2006
|
| 7,468,911 Non-volatile memory using multiple boosting modes for reduced program disturb
|
52 |
2006
|
| 7,440,323 Reducing program disturb in non-volatile memory using multiple boosting modes
|
10 |
2006
|
| 7,696,035 Method for fabricating non-volatile memory with boost structures
|
3 |
2006
|
| 7,508,710 Operating non-volatile memory with boost structures
|
49 |
2006
|
| 7,508,703 Non-volatile memory with boost structures
|
1 |
2006
|
| 7,697,338 Systems for controlled boosting in non-volatile memory soft programming
|
3 |
2006
|
| 7,535,763 Controlled boosting in non-volatile memory soft programming
|
5 |
2006
|
| 7,623,386 Reducing program disturb in non-volatile storage using early source-side boosting
|
4 |
2006
|
| 7,623,387 Non-volatile storage with early source-side boosting for reducing program disturb
|
2 |
2006
|
| 7,471,566 Self-boosting system for flash memory cells
|
7 |
2006
|
| 7,570,520 Non-volatile storage system with initial programming voltage based on trial
|
50 |
2006
|
| 7,551,482 Method for programming with initial programming voltage based on trial
|
5 |
2006
|
| 7,616,498 Non-volatile storage system with resistance sensing and compensation
|
28 |
2006
|
| 7,590,002 Resistance sensing and compensation for non-volatile storage
|
27 |
2006
|
| 7,495,962 Alternating read mode
|
4 |
2006
|
| 7,468,918 Systems for programming non-volatile memory with reduced program disturb by removing pre-charge dependency on word line data
|
11 |
2006
|
| 7,463,531 Systems for programming non-volatile memory with reduced program disturb by using different pre-charge enable voltages
|
9 |
2006
|
| 7,450,430 Programming non-volatile memory with reduced program disturb by using different pre-charge enable voltages
|
7 |
2006
|
| 7,440,324 Apparatus with alternating read mode
|
48 |
2006
|
| 7,433,241 Programming non-volatile memory with reduced program disturb by removing pre-charge dependency on word line data
|
10 |
2006
|
| 7,583,535 Biasing non-volatile storage to compensate for temperature variations
|
5 |
2006
|
| 7,583,539 Non-volatile storage with bias for temperature compensation
|
2 |
2006
|
| 7,554,853 Non-volatile storage with bias based on selective word line
|
1 |
2006
|
| 7,525,843 Non-volatile storage with adaptive body bias
|
7 |
2006
|
| 7,468,919 Biasing non-volatile storage based on selected word line
|
8 |
2006
|
| 7,468,920 Applying adaptive body bias to non-volatile storage
|
6 |
2006
|
| 7,535,764 Adjusting resistance of non-volatile memory using dummy memory cells
|
8 |
2007
|
| 7,904,793 Method for decoding data in non-volatile storage using reliability metrics based on multiple reads
|
7 |
2007
|
| 7,797,480 Method for reading non-volatile storage using pre-conditioning waveforms and modified reliability metrics
|
1 |
2007
|
| 7,606,071 Compensating source voltage drop in non-volatile storage
|
6 |
2007
|
| 7,606,072 Non-volatile storage with compensation for source voltage drop
|
2 |
2007
|
| 7,606,079 Reducing power consumption during read operations in non-volatile storage
|
3 |
2007
|
| 7,440,327 Non-volatile storage with reduced power consumption during read operations
|
3 |
2007
|
| 7,463,522 Non-volatile storage with boosting using channel isolation switching
|
0 |
2007
|
| 7,460,404 Boosting for non-volatile storage using channel isolation switching
|
3 |
2007
|
| 7,706,189 Non-volatile storage system with transitional voltage during programming
|
3 |
2007
|
| 7,656,703 Method for using transitional voltage during programming of non-volatile storage
|
2 |
2007
|
| 7,545,678 Non-volatile storage with source bias all bit line sensing
|
0 |
2007
|
| 7,539,060 Non-volatile storage using current sensing with biasing of source and P-Well
|
0 |
2007
|
| 7,532,516 Non-volatile storage with current sensing of negative threshold voltages
|
0 |
2007
|
| 7,489,554 Method for current sensing with biasing of source and P-well in non-volatile storage
|
0 |
2007
|
| 7,471,567 Method for source bias all bit line sensing in non-volatile storage
|
6 |
2007
|
| 7,447,079 Method for sensing negative threshold voltages in non-volatile storage using current sensing
|
17 |
2007
|
| 7,599,224 Systems for coarse/fine program verification in non-volatile memory using different reference levels for improved sensing
|
7 |
2007
|
| 7,508,715 Coarse/fine program verification in non-volatile memory using different reference levels for improved sensing
|
15 |
2007
|
| 7,522,457 Systems for erase voltage manipulation in non-volatile memory for controlled shifts in threshold voltage
|
1 |
2007
|
| 7,457,166 Erase voltage manipulation in non-volatile memory for controlled shifts in threshold voltage
|
4 |
2007
|
| 7,894,269 Nonvolatile memory and method for compensating during programming for perturbing charges of neighboring cells
|
3 |
2007
|
| 7,652,929 Non-volatile memory and method for biasing adjacent word line for verify during programming
|
9 |
2007
|
| 7,577,034 Reducing programming voltage differential nonlinearity in non-volatile storage
|
0 |
2007
|
| 7,894,263 High voltage generation and control in source-side injection programming of non-volatile memory
|
1 |
2007
|
| 7,447,086 Selective program voltage ramp rates in non-volatile memory
|
3 |
2007
|
| 7,561,473 System for performing data pattern sensitivity compensation using different voltage
|
3 |
2007
|
| 7,821,835 Concurrent programming of non-volatile memory
|
0 |
2007
|
| 7,796,444 Concurrent programming of non-volatile memory
|
0 |
2007
|
| 7,570,518 Concurrent programming of non-volatile memory
|
1 |
2007
|
| 7,411,827 Boosting to control programming of non-volatile memory
|
10 |
2007
|
| 7,688,638 Faster programming of multi-level non-volatile storage through reduced verify operations
|
2 |
2007
|
| 8,193,055 Method of forming memory with floating gates including self-aligned metal nanodots using a polymer solution
|
1 |
2007
|
| 7,723,186 Method of forming memory with floating gates including self-aligned metal nanodots using a coupling layer
|
2 |
2007
|
| 7,463,528 Temperature compensation of select gates in non-volatile memory
|
2 |
2007
|
| 7,460,407 Temperature compensation of voltages of unselected word lines in non-volatile memory based on word line position
|
1 |
2007
|
| 7,468,921 Method for increasing programming speed for non-volatile memory by applying direct-transitioning waveforms to word lines
|
0 |
2008
|
| 7,606,100 Erasing non-volatile memory using individual verification and additional erasing of subsets of memory cells
|
1 |
2008
|
| 7,672,163 Control gate line architecture
|
2 |
2008
|
| 7,577,026 Source and drain side early boosting using local self boosting for non-volatile storage
|
0 |
2008
|
| 7,606,076 Sensing in non-volatile storage using pulldown to regulated source voltage to remove system noise
|
4 |
2008
|
| 7,915,664 Non-volatile memory with sidewall channels and raised source/drain regions
|
0 |
2008
|
| 8,051,240 Compensating non-volatile storage using different pass voltages during program-verify and read
|
1 |
2008
|
| 7,719,902 Enhanced bit-line pre-charge scheme for increasing channel boosting in non-volatile storage
|
0 |
2008
|
| 7,800,956 Programming algorithm to reduce disturb with minimal extra time penalty
|
3 |
2008
|
| 7,751,249 Minimizing power noise during sensing in memory device
|
2 |
2008
|
| 7,751,250 Memory device with power noise minimization during sensing
|
0 |
2008
|
| 7,876,611 Compensating for coupling during read operations in non-volatile storage
|
1 |
2008
|
| 7,843,739 System for verifying non-volatile storage using different voltages
|
1 |
2008
|
| 7,796,430 Non-volatile memory using multiple boosting modes for reduced program disturb
|
3 |
2008
|
| 7,755,946 Data state-based temperature compensation during sensing in non-volatile memory
|
2 |
2008
|
| 7,606,074 Word line compensation in non-volatile memory erase operations
|
1 |
2008
|
| 7,773,414 Self-boosting system for flash memory cells
|
0 |
2008
|
| 7,751,244 Applying adaptive body bias to non-volatile storage based on number of programming cycles
|
2 |
2008
|
| 7,633,802 Non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages
|
51 |
2008
|
| 7,778,106 Read operation for non-volatile storage with compensation for coupling
|
1 |
2009
|
| 7,613,068 Read operation for non-volatile storage with compensation for coupling
|
3 |
2009
|
| 7,768,826 Methods for partitioned erase and erase verification in non-volatile memory to compensate for capacitive coupling effects
|
0 |
2009
|
| 7,796,433 Apparatus for reducing the impact of program disturb
|
0 |
2009
|
| 7,864,570 Self-boosting system with suppression of high lateral electric fields
|
0 |
2009
|
| 8,130,556 Pair bit line programming to improve boost voltage clamping
|
0 |
2009
|
| 8,004,900 Controlling select gate voltage during erase to improve endurance in non-volatile memory
|
0 |
2009
|
| 7,790,562 Method for angular doping of source and drain regions for odd and even NAND blocks
|
2 |
2009
|
| 7,733,701 Reading non-volatile storage with efficient setup
|
0 |
2009
|
| 7,768,834 Non-volatile storage system with initial programming voltage based on trial
|
1 |
2009
|
| 8,111,554 Starting program voltage shift with cycling of non-volatile memory
|
0 |
2009
|
| 8,284,606 Compensating for coupling during programming
|
0 |
2009
|
| 7,911,838 Read operation for non-volatile storage with compensation for coupling
|
0 |
2009
|
| 8,179,723 Non-volatile memory with boost structures
|
0 |
2010
|
| 7,911,846 Apparatus for reducing the impact of program disturb
|
0 |
2010
|
| 8,263,465 Method of forming memory with floating gates including self-aligned metal nanodots using a coupling layer
|
0 |
2010
|
| 7,911,849 Controlled boosting in non-volatile memory soft programming
|
1 |
2010
|
| 8,000,146 Applying different body bias to different substrate portions for non-volatile storage
|
0 |
2010
|
| 8,274,831 Programming non-volatile storage with synchronized coupling
|
1 |
2010
|
| 7,902,031 Method for angular doping of source and drain regions for odd and even NAND blocks
|
0 |
2010
|
| 8,383,479 Integrated nanostructure-based non-volatile memory fabrication
|
0 |
2010
|
| 8,014,205 System for verifying non-volatile storage using different voltages
|
0 |
2010
|
| 8,331,154 Apparatus for reducing the impact of program disturb
|
0 |
2011
|
| 8,270,217 Apparatus for reducing the impact of program disturb
|
0 |
2011
|
| 8,163,622 Method for angular doping of source and drain regions for odd and even NAND blocks
|
0 |
2011
|
| 8,406,052 High voltage generation and control in source-side injection programming of non-volatile memory
|
0 |
2011
|
| 8,199,571 Read operation for non-volatile storage with compensation for coupling
|
0 |
2011
|
| 8,400,839 Nonvolatile memory and method for compensating during programming for perturbing charges of neighboring cells
|
0 |
2011
|
| 8,427,873 Read operation for non-volatile storage with compensation for coupling
|
0 |
2011
|
| 8,164,957 Reducing energy consumption when applying body bias to substrate having sets of nand strings
|
0 |
2011
|
| 8,411,507 Compensating for coupling during programming
|
0 |
2012
|
