Reducing shunts in memories with phase-change material
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United States of America Patent
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Mar 1, 2005
Grant Date -
Mar 20, 2003
app pub date -
Sep 17, 2001
filing date -
Sep 17, 2001
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Abstract
A memory cell may include a phase-change material. Adhesion between the phase-change material and a dielectric or other substrate may be enhanced by using an adhesion enhancing interfacial layer. Conduction past the phase-change material through the interfacial layer may be reduced by providing a discontinuity or other feature that reduces or prevents conduction along said interfacial layer.
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