Semiconductor device having a ghost source/drain region and a method of manufacture therefor
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United States of America Patent
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Mar 8, 2005
Grant Date -
Dec 19, 2002
app pub date -
Jun 15, 2001
filing date -
Jun 15, 2001
priority date (Note) -
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Abstract
The present invention provides a semiconductor device and a method of manufacture therefor. The semiconductor device includes a channel region located in a semiconductor substrate and a trench located adjacent a side of the channel region. The semiconductor device further includes an isolation structure located in the trench, and a source/drain region located over the isolation structure.
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