Sputtered spring films with low stress anisotropy

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United States of America Patent

PATENT NO 6866255
APP PUB NO 20030192476A1
SERIAL NO

10121644

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Abstract

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Methods are disclosed for fabricating spring structures that minimize helical twisting by reducing or eliminating stress anisotropy in the thin films from which the springs are formed through manipulation of the fabrication process parameters and/or spring material compositions. In one embodiment, isotropic internal stress is achieved by manipulating the fabrication parameters (i.e., temperature, pressure, and electrical bias) during spring material film information to generate the tensile or compressive stress at the saturation point of the spring material. Methods are also disclosed for tuning the saturation point through the use of high temperature or the incorporation of softening metals. In other embodiments, isotropic internal stress is generated through randomized deposition (e.g., pressure homogenization) or directed deposition techniques (e.g., biased sputtering, pulse sputtering, or long throw sputtering). Cluster tools are used to separate the deposition of release and spring materials.

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Patent Owner(s)

Patent OwnerAddress
XEROX CORPORATION201 MERRITT 7 P O BOX 4505 NORWALK CT 06851-1056

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fork, David K Los Altos, CA 160 4014
Littau, Karl Palo Alto, CA 33 1395
Solberg, Scott Mountain View, CA 8 97

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