Importance

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Abstract

A static random access memory cell with metal fill to form capacitors for increasing the capacitance of the memory cell. More specifically, a semiconductor device including a structure having an upper surface and a contact surface formed at the upper surface of the structure. A dielectric material is formed over the contact surface with a first conductive node and a second conductive node extending beyond the dielectric material. Dielectric spacers are formed around the first and second conductive nodes and conductive elements are formed between the dielectric spacers. The conductive elements and spacers form capacitors without implementing additional masking steps.

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First Claim