Single-polarity programmable resistance-variable memory element
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United States of America Patent
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Mar 15, 2005
Grant Date -
Mar 4, 2004
app pub date -
Aug 29, 2002
filing date -
Aug 29, 2002
priority date (Note) -
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Abstract
A resistance variable memory element with improved data retention and switching characteristics switched between resistance memory states upon the application of write pulses having the same polarity. The resistance variable memory element can be provided having at least one silver-selenide layer in between glass layers, the glass layers are a chalcogenide glass having a Ge.sub.x Se.sub.100-x composition.
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