Temperature compensated RRAM circuit

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United States of America Patent

PATENT NO 6868025
APP PUB NO 20040179414A1
SERIAL NO

10384985

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Abstract

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A temperature compensated RRAM sensing circuit to improve the RRAM readability against temperature variations is disclosed. The circuit comprises a temperature dependent element to control the response of a temperature compensated circuit to generate a temperature dependent signal to compensate for the temperature variations of the resistance states of the memory resistors. The temperature dependent element can control the sensing signal supplied to the memory resistor so that the resistance states of the memory resistor are compensated against temperature variations. The temperature dependent element can control the reference signal supplied to the comparison circuit so that the output signal provided by the comparison circuit is compensated against temperature variations. The temperature dependent element is preferably made of the same material and process as the memory resistors.

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Patent Owner(s)

Patent OwnerAddress
XENOGENIC DEVELOPMENT LIMITED LIABILITY COMPANY2711 CENTERVILLE RD SUITE 400 WILMINGTON DE 19808

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hsu, Sheng Teng Camas, WA 411 11449

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