Deposition of passivation layers for active matrix liquid crystal display (AMLCD) applications
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United States of America Patent
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Mar 22, 2005
Grant Date -
Oct 9, 2003
app pub date -
Apr 9, 2002
filing date -
Apr 9, 2002
priority date (Note) -
Expired
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Abstract
A method of passivation layer deposition using a cyclical deposition process is described. The cyclical deposition process may comprise alternately adsorbing a silicon-containing precursor and a reactant gas on a substrate structure. Thin film transistors, such as a bottom-gate transistor or a top-gate transistor, including a silicon-containing passivation layer, may be formed using such cyclical deposition techniques.
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