Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process
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United States of America Patent
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Mar 29, 2005
Grant Date -
Feb 6, 2003
app pub date -
Sep 25, 2002
filing date -
May 27, 1997
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method of removing a photoresist or a photoresist residue from a semiconductor substrate is disclosed. The semiconductor substrate with the photoresist or the photoresist residue on a surface of the semiconductor substrate is placed within a pressure chamber. The pressure chamber is then pressurized. Supercritical carbon dioxide and a stripper chemical are introduced to the pressure chamber. The supercritical carbon dioxide and the stripper chemical are maintained in contact with the photoresist or the photoresist residue until the photoresist or the photoresist residue is removed from the semiconductor substrate. The pressure chamber is then flushed and vented.
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