Process for high yield fabrication of MEMS devices
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United States of America Patent
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Mar 29, 2005
Grant Date -
Apr 1, 2004
app pub date -
Sep 30, 2002
filing date -
Sep 30, 2002
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Abstract
A MEMS fabrication process eliminates through-wafer etching, minimizes the thickness of silicon device layers and the required etch times, provides exceptionally precise layer to layer alignment, does not require a wet etch to release the moveable device structure, employs a supporting substrate having no device features on one side, and utilizes low-temperature metal-metal bonding which is relatively insensitive to environmental particulates. This process provided almost 100% yield of scanning micromirror devices exhibiting scanning over a 12.degree. optical range and a mechanical angle of .sup..+-. 3.degree. at a high resonant frequency of 2.5 kHz with an operating voltage of only 20 VDC.
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