Manufacturing method of semiconductor device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Mar 29, 2005
Grant Date -
Oct 23, 2003
app pub date -
Apr 17, 2003
filing date -
Apr 19, 2002
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
After deposition of a conductor film made of titanium tungsten over a main surface of a semiconductor substrate formed with grooves, an initial conductor film made of aluminium is further deposited. Subsequently, the conductor film is made to reflow and run into the grooves. Thereafter, while heating, further conductor films are respectively deposited, thereby causing these conductor films to run into the grooves. The provision of the initial conductor film suppresses or prevents aluminium in the further conductor films and silicon in the semiconductor substrate from reacting with each other during reflowing of the conductor films.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully