Programmable conductor random access memory and a method for writing thereto
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United States of America Patent
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Mar 29, 2005
Grant Date -
Jun 26, 2003
app pub date -
Dec 20, 2001
filing date -
Dec 20, 2001
priority date (Note) -
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Abstract
The present invention provides an improved write circuit and method for writing a programmable conductor random access memory (PCRAM) cell. The method comprises precharging a bit line to a first voltage and applying a second voltage to a first terminal of a chalcogenide memory element. A second terminal of the chalcogenide memory element is selectively coupled to the bit line to produce a voltage across the memory element sufficient to write a predetermined resistance state into the element. The first voltage may take on two different values to program two different resistance states into the memory element.
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