Constant pH polish and scrub
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United States of America Patent
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Apr 5, 2005
Issued Date -
N/A
app pub date -
Aug 29, 2003
filing date -
Aug 31, 2001
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A system and method are provided that maintains a high pH at the wafer surface through the entire polish process and then lowers the pH only when necessary in a controlled fashion after CMP and during the post-polish clean. A fluid having a high pH chemistry and, optionally, surfactants is used instead of deionized water to keep the wafer and polisher components wet and to clean the slurry residue from the polishing pad.
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