SOI substrate and manufacturing method thereof
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United States of America Patent
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Apr 5, 2005
Grant Date -
Nov 25, 2004
app pub date -
Dec 22, 2003
filing date -
Dec 24, 2002
priority date (Note) -
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Abstract
An SOI substrate having a partial SOI structure in which a buried insulating film having a predetermined area is formed via an active layer in a part of a silicon single crystal substrate in plan view by ion-implanting elements to the part of the substrate and then applying thereto a thermal processing, wherein a thickness of a peripheral edge portion of said buried insulating film is getting thinner toward a terminal edge of said buried insulating film.
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