High frequency sputtering device

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United States of America Patent

PATENT NO 6878249
APP PUB NO 20010052458A1
SERIAL NO

09867383

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Abstract

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The stray capacitance between the target and grounding member and the loss of high frequency electric current are reduced by arranging dielectric members and metal members with a particular configuration at the circumference of the cathode and target.

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Patent Owner(s)

Patent OwnerAddress
ANELVA CORPORATION8-1 YOTSUYA 5-CHOME FUCHU-SHI TOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hasegawa, Shinya Tokyo, JP 161 1308
Kouyama, Yuka Tokyo, JP 1 49
Numazawa, Yoichi Tokyo, JP 1 49

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