Radiation-emitting semiconductor element and method for producing the same
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United States of America Patent
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Apr 12, 2005
Grant Date -
Mar 25, 2004
app pub date -
Jan 7, 2003
filing date -
Apr 26, 2000
priority date (Note) -
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Abstract
This invention describes a radiation-emitting semiconductor component based on GaN, whose semiconductor body is made up of a stack of different GaN semiconductor layers (1). The semiconductor body has a first principal surface (3) and a second principal surface (4), with the radiation produced being emitted through the first principal surface (3) and with a reflector (6) being produced on the second principal surface (4). The invention also describes a production method for a semiconductor component pursuant to the invention. An interlayer (9) is first applied to a substrate (8), and a plurality of GaN layers (1) that constitute the semiconductor body of the component are then applied to this. The substrate (8) and the interlayer (9) are then detached and a reflector (6) is produced on a principal surface of the semiconductor body.
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