CONDUCTANCE-VOLTAGE (GV) BASED METHOD FOR DETERMINING LEAKAGE CURRENT IN DIELECTRICS
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Apr 12, 2005
Grant Date -
May 5, 2005
app pub date -
Nov 4, 2003
filing date -
Nov 4, 2003
priority date (Note) -
Granted
status (Latency Note)
Importance
Abstract
A leakage current of a dielectric overlaying a semiconductor wafer can be determined by moving a conductive probe into contact with the dielectric and applying an electrical stimulus, in the form of a fixed amplitude, fixed frequency AC voltage superimposed on a DC voltage which is swept from a starting voltage towards an ending voltage, between the probe tip and the semiconductor wafer. Conductance values associated with the dielectric and the semiconductor wafer can be determined from phase angles between the AC voltage and an AC current resulting from the applied AC voltage during the sweep of the DC voltage. The leakage current of the dielectric can then be determined from the thus determined conductance values.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully