Optical proximity correction method utilizing ruled ladder bars as sub-resolution assist features
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United States of America Patent
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Apr 19, 2005
Grant Date -
Dec 19, 2002
app pub date -
Mar 13, 2002
filing date -
Mar 14, 2001
priority date (Note) -
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status (Latency Note)
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Abstract
A photolithography mask for optically transferring a pattern formed in said mask onto a substrate and for negating optical proximity effects. The mask includes a plurality of resolvable features to be printed on the substrate, where each of the plurality of resolvable features has a longitudinal axis extending in a first direction; and a pair of non-resolvable optical proximity correction features disposed between two of the plurality of resolvable features, where the pair of non-resolvable optical proximity correction features has a longitudinal axis extending in a second direction, wherein the first direction of the longitudinal axis of the plurality of resolvable features is orthogonal to the second direction of the longitudinal axis of the pair of non-resolvable optical proximity correction features.
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