Integrated deposition process for copper metallization
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United States of America Patent
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Apr 19, 2005
Grant Date -
Oct 16, 2003
app pub date -
Apr 22, 2003
filing date -
Dec 2, 1997
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method and apparatus for metallization process sequences are provided for forming reliable interconnects including lines, vias and contacts. An initial barrier layer, such as Ta or TaN, is first formed on a patterned substrate followed by seed layer formed using high density plasma PVD techniques. The structure is then filled using either 1) electroplating, 2) PVD reflow, 3) CVD followed by PVD reflow, or 4) CVD.
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