Ferroelectric memory supplying predetermined amount of direct-current bias electricity to first and second bit lines upon reading data from memory cell
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United States of America Patent
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Apr 19, 2005
Grant Date -
Jan 29, 2004
app pub date -
Jun 4, 2003
filing date -
Jun 4, 2002
priority date (Note) -
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Abstract
Upon reading data from a memory cell, first and second bit lines are precharged beforehand at a grounding voltage. Then, at a start of the reading, a predetermined amount of direct-current bias electricity is supplied to the first and second bit lines for a predetermined period of time by a direct-current bias electricity supply circuit. Thereafter, a sense amplifier is activated.
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