Method for fabricating a semiconductor device including a capacitance insulating film having a perovskite structure
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United States of America Patent
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Apr 26, 2005
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app pub date -
Feb 13, 2003
filing date -
Feb 15, 2002
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Abstract
A semiconductor device has a capacitance insulating film having a perovskite structure represented by the general formula ABO.sub.3 (where each of A and B is a metal element) and first and second electrodes opposed to each other with the capacitance insulating film interposed therebetween. The capacitance insulating film is formed such that the composition of the metal element A or B is higher in the region thereof adjacent the first electrode than in the other region thereof.
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