Ferromagnetic semiconductor structure and method for forming the same

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United States of America Patent

PATENT NO 6885065
APP PUB NO 20040094801A1
SERIAL NO

10299801

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Abstract

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A ferromagnetic semiconductor structure is provided. The structure includes a monocrystalline semiconductor substrate and a doped titanium oxide anatase layer overlying the semiconductor substrate.

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Patent Owner(s)

  • FREESCALE SEMICONDUCTOR, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Droopad, Ravindranath Chandler, AZ 76 2135
Li, Hao Chandler, AZ 488 4110
Liang, Yong Gilbert, AZ 102 364
Yu, Zhiyi Gilbert, AZ 47 1475

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