Ferromagnetic semiconductor structure and method for forming the same

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United States of America Patent

PATENT NO 6885065
APP PUB NO 20040094801A1
SERIAL NO

10299801

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Abstract

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A ferromagnetic semiconductor structure is provided. The structure includes a monocrystalline semiconductor substrate and a doped titanium oxide anatase layer overlying the semiconductor substrate.

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Patent Owner(s)

Patent OwnerAddress
SHENZHEN XINGUODU TECHNOLOGY CO LTD518000 17B JINSONG BUILDING TAIRAN 4TH ROAD SHATOU STREET FUTIAN DISTRICT SHENZHEN CITY GUANGDONG PROVINCE SHENZHEN CITY GUANGDONG PROVINCE 518000

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Droopad, Ravindranath Chandler, AZ 76 2248
Li, Hao Chandler, AZ 560 4472
Liang, Yong Gilbert, AZ 114 447
Yu, Zhiyi Gilbert, AZ 47 1586

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