Ferroelectric-type nonvolatile semiconductor memory
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United States of America Patent
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May 3, 2005
Grant Date -
Mar 27, 2003
app pub date -
Aug 13, 2002
filing date -
Aug 16, 2001
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A ferroelectric-type nonvolatile semiconductor memory comprising a plurality of bit lines and a plurality of memory cells, a plurality of the memory cells belonging to one of two or more thermal history groups having different thermal histories with regard to their production processes, and a reference potential of the same level is provided to the bit lines connected to the memory cells belonging to the same thermal history group, and reference potentials of different levels are provided to the bit lines connected to the memory cells belonging to the different thermal history groups.
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