Temperature measuring sensor incorporated in semiconductor substrate, and semiconductor device containing such temperature measuring sensor
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United States of America Patent
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May 10, 2005
Grant Date -
Apr 15, 2004
app pub date -
Sep 4, 2003
filing date -
Oct 9, 2002
priority date (Note) -
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Abstract
A temperature measuring sensor is incorporated in a substrate of a semiconductor device and has a diode, and resistor formed in the substrate and connected in series. When a first forward constant current is supplied to the diode through the resistor, a potential difference VA1 is produced between terminal ends of both the diode and the resistor, and a potential difference VF1 is produced between terminal ends of the diode. When a second forward constant current is supplied to the diode through the resistor, a potential difference VA2 is produced between the terminal ends of both the diode and the resistor, and a potential difference VF2 is produced between the terminal ends of the diode. A real temperature T of the substrate is calculated by the following formula:
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