Gettering technique for wafers made using a controlled cleaving process
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United States of America Patent
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May 10, 2005
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app pub date -
Mar 26, 2003
filing date -
Jul 18, 1997
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Abstract
A technique for forming a gettering layer in a wafer made using a controlled cleaving process. The gettering layer can be made by implanting using beam line or plasma immersion ion implantaion, or made by forming a film of material such as polysilicon by way of chemical vapor deposition. A controlled cleaving process is used to form the wafer, which is a multilayered silicon on insulator substrate. The gettering layer removes and/or attracts impurities in the wafer, which can be detrimental to the functionality and reliability of an integrated circuit device made on the wafer.
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