Resistance variable ‘on ’ memory
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United States of America Patent
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May 10, 2005
Grant Date -
Aug 21, 2003
app pub date -
Feb 20, 2002
filing date -
Feb 20, 2002
priority date (Note) -
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Abstract
A resistance variable memory element and method for stabilizing the resistance variable memory element by providing a first and second electrode connected to a resistance variable material whereby the first and second electrodes comprise materials capable of providing a differential electrochemical potential across the resistance variable memory element which causes the resistance variable memory element to write to a predetermined 'on' state. The resistance variable memory element is stabilized in a low resistance 'on' state by the differential electrochemical potential. The first electrode preferably is a platinum electrode and the second electrode is preferably a silver electrode. The method and circuitry further includes a reverse refresh for stabilizing the resistance variable memory element in a high resistance state by applying a reverse voltage to the memory element.
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