Non-volatile memory device and manufacturing method thereof
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United States of America Patent
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May 17, 2005
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N/A
app pub date -
Apr 15, 2002
filing date -
Dec 30, 1999
priority date (Note) -
Expired
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Abstract
A non-volatile memory device and a manufacturing method thereof are disclosed. The non-volatile memory device includes a gate insulating film formed on a semiconductor substrate, a floating gate formed on the gate insulating film, a dielectric film comprising a (TaO)1-x(TiO)xN film on the floating gate, and a control gate formed on the dielectric film. Thus, large charge capacitance values can be obtained compared to a similarly sized device using an ONO or Ta2O5 thin film dielectric while simultaneously simplifying the manufacturing process.
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