Method of manufacturing a semiconductor device by RTA process in nitrogen atmosphere
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United States of America Patent
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May 17, 2005
Grant Date -
Jun 17, 2004
app pub date -
Jul 2, 2003
filing date -
Dec 12, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Disclosed is a method of manufacturing a semiconductor device. A gate is formed on a given region of a semiconductor substrate. Spacers are then formed using DCS-HTO or TEOS. Hydrogen remaining within the spacers is removed by a RTA process under nitrogen atmosphere and nitride films are formed on the spacers at the same time. In case of a flash memory device, a retention characteristic can be improved. A process of forming the nitride film additionally required in a subsequent contact hole formation process may be omitted. The sheet resistance of the gate could be improved by promoting growth of a crystal grain of a tungsten silicide film constituting a control gate.
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