Phase-change memory devices with a self-heater structure
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United States of America Patent
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May 17, 2005
Grant Date -
Aug 26, 2004
app pub date -
Feb 17, 2004
filing date -
Feb 24, 2003
priority date (Note) -
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Abstract
Phase change memory devices include a phase-change memory layer on a semiconductor substrate. The phase-change memory layer has a major axis that is substantially parallel to a major axis of the semiconductor substrate and has a first surface and a second surface opposite the first surface that are substantially parallel to the major axis of the phase-change memory layer. A first electrode is provided on the semiconductor substrate that is electrically connected to the first surface of the phase-change memory layer in a first contact region of the phase-change memory layer. A second electrode is provided on the semiconductor substrate that is electrically connected to the phase-change memory layer in a second contact region of the phase-change memory layer. The second contact region is space apart from the first contact region.
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