Back illuminated photodiodes
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United States of America Patent
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-
May 17, 2005
Grant Date -
Sep 25, 2003
app pub date -
Feb 10, 2003
filing date -
Feb 11, 2002
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A highly reflecting back illuminated diode structure allows light that has not been absorbed by a semiconductor absorbing region to be back reflected for at least a second pass into the absorbing region. The diode structure in a preferred embodiment provides a highly reflecting layer of gold to be supported in part by a conducting alloyed electrode ring contact and in part by a passivation layer of SixNy. Conveniently this structure provides a window within the contact which allows light to pass between the absorbing region and the reflecting layer of gold.
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