US Patent No: 6,897,526

Number of patents in Portfolio can not be more than 2000

Semiconductor device and process for producing the same

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

To provide a semiconductor device that can effectively suppress the short channel effect without deterioration of carrier migration, an impurity ion is added from a direction of the <110> axis with respect to a silicon substrate on forming a punch through stopper under the gate electrode. In this invention, because the addition of the impurity is conducted by utilizing the principal of channeling, the impurity can be added a small amount of scattering suppressing damages on the surface of the silicon substrate. A channel forming region having an extremely small impurity concentration and substantially no crystallinity disorder is formed.

Loading the Abstract Image... loading....

First Claim

See full text

all claims..

Related Publications

Loading Related Publications... loading....

Patent Owner(s)

Patent OwnerAddressTotal Patents
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.KANAGAWA-KEN8925

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kubo, Nobuo Tokyo, JP 100 290
Miyanaga, Akiharu Kanagawa, JP 308 9431

Cited Art Landscape

Patent Info (Count) # Cites Year
 
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (4)
5,643,826 Method for manufacturing a semiconductor device 1230 1994
5,923,962 Method for manufacturing a semiconductor device 884 1995
5,818,076 Transistor and semiconductor device 120 1996
5,949,107 Semiconductor device and method of fabricating same 124 1996
 
MITSUBISHI DENKI KABUSHIKI KAISHA (3)
5,146,291 MIS device having lightly doped drain structure 75 1989
5,217,913 Method of manufacturing an MIS device having lightly doped drain structure and conductive sidewall spacers 35 1992
5,854,509 Method of fabricating semiconductor device and semiconductor device 44 1996
 
SUN MICROSYSTEMS, INC. (2)
5,650,340 Method of making asymmetric low power MOS devices 87 1995
6,093,951 MOS devices with retrograde pocket regions 40 1997
 
ALPHA INDUSTRIES, INC. (1)
4,993,298 Apparatus for mounting a notching blade 5 1989
 
CANON KABUSHIKI KAISHA (1)
5,854,123 Method for producing semiconductor substrate 267 1996
 
FUJITSU MICROELECTRONICS LIMITED (1)
4,933,298 Method of making high speed semiconductor device having a silicon-on-insulator structure 140 1988
 
HITACHI, LTD. (1)
4,768,076 Recrystallized CMOS with different crystal planes 104 1985
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (1)
6,083,794 Method to perform selective drain engineering with a non-critical mask 30 1997
 
JAPAN DISPLAY CENTRAL INC. (1)
5,945,972 Display device 173 1996
 
KABUSHIKI KAISHA TOSHIBA (1)
4,857,986 Short channel CMOS on 110 crystal plane 80 1986
 
LSI LOGIC CORPORATION (1)
5,563,928 Method and apparatus for optimizing the performance of digital systems 40 1995
 
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (1)
6,031,268 Complementary semiconductor device and method for producing the same 9 1998
 
MAX PLANCK SOCIETY (1)
5,877,070 Method for the transfer of thin layers of monocrystalline material to a desirable substrate 376 1997
 
NATIONAL SCIENCE COUNCIL (1)
5,893,740 Method of forming a short channel field effect transistor 29 1997
 
PROMOS TECHNOLOGIES INC. (1)
5,926,712 Process for fabricating MOS device having short channel 11 1996
 
RICOH COMPANY, LTD. (1)
5,793,073 Semiconductor thin film sensor device with (110) plane 35 1996
 
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES (1)
5,882,987 Smart-cut process for the production of thin semiconductor material films 341 1997
 
THOMSON LICENSING (1)
5,899,711 Method for enhancing hydrogenation of thin film transistors using a metal capping layer and method for batch hydrogenation 25 1996
 
UNITED MICROELECTRONICS CORP. (1)
5,686,321 Local punchthrough stop for ultra large scale integration devices 18 1996

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (7)
7,015,141 Semiconductor device and manufacturing method thereof 24 2004
7,745,293 Method for manufacturing a thin film transistor including forming impurity regions by diagonal doping 1 2005
7,504,327 Method of manufacturing thin film semiconductor device 6 2005
7,573,069 Semiconductor device and manufacturing method thereof 5 2006
7,858,987 Semiconductor device and manufacturing method thereof 5 2009
8,097,884 Semiconductor device and manufacturing method thereof 5 2010
8,748,898 Semiconductor device and manufacturing method thereof 0 2011
 
INTEL CORPORATION (2)
7,312,485 CMOS fabrication process utilizing special transistor orientation 7 2000
7,888,710 CMOS fabrication process utilizing special transistor orientation 0 2007
 
RENESAS ELECTRONICS CORPORATION (1)
7,964,921 MOSFET and production method of semiconductor device 0 2006
 
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (1)
7,164,189 Slim spacer device and manufacturing method 9 2004

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
11.5 Year Payment $7400.00 $3700.00 $1850.00 Nov 24, 2016
Fee Large entity fee small entity fee micro entity fee
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00