Semiconductor device and process for producing the same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 6897526
SERIAL NO

09241695

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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To provide a semiconductor device that can effectively suppress the short channel effect without deterioration of carrier migration, an impurity ion is added from a direction of the <110> axis with respect to a silicon substrate on forming a punch through stopper under the gate electrode. In this invention, because the addition of the impurity is conducted by utilizing the principal of channeling, the impurity can be added a small amount of scattering suppressing damages on the surface of the silicon substrate. A channel forming region having an extremely small impurity concentration and substantially no crystallinity disorder is formed.

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First Claim

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Patent Owner(s)

Patent OwnerAddressTotal Patents
Semiconductor Energy Laboratory Co., Ltd.KANAGAWA-KEN10745

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kubo, Nobuo Kanagawa, JP 67 537
Miyanaga, Akiharu Kanagawa, JP 248 11592

Cited Art Landscape

Patent Info (Count) # Cites Year
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (1)
* 6083794 Method to perform selective drain engineering with a non-critical mask 33 1997
 
JAPAN DISPLAY CENTRAL INC. (1)
* 5945972 Display device 239 1996
 
ALPHA INDUSTRIES, INC. (1)
4993298 Apparatus for mounting a notching blade 5 1989
 
LSI LOGIC CORPORATION (1)
* 5563928 Method and apparatus for optimizing the performance of digital systems 42 1995
 
SOITEC (1)
5882987 Smart-cut process for the production of thin semiconductor material films 385 1997
 
NATIONAL SCIENCE COUNCIL (1)
* 5893740 Method of forming a short channel field effect transistor 30 1997
 
THOMSON LICENSING (1)
5899711 Method for enhancing hydrogenation of thin film transistors using a metal capping layer and method for batch hydrogenation 26 1996
 
SUN MICROSYSTEMS, INC. (2)
* 5650340 Method of making asymmetric low power MOS devices 96 1995
* 6093951 MOS devices with retrograde pocket regions 41 1997
 
RICOH COMPANY, LTD. (1)
5793073 Semiconductor thin film sensor device with (110) plane 36 1996
 
HITACHI, LTD. (1)
4768076 Recrystallized CMOS with different crystal planes 106 1985
 
Max-Plank-Society (1)
5877070 Method for the transfer of thin layers of monocrystalline material to a desirable substrate 422 1997
 
UNITED MICROELECTRONICS CORP. (1)
* 5686321 Local punchthrough stop for ultra large scale integration devices 18 1996
 
FUJITSU MICROELECTRONICS LIMITED (1)
4933298 Method of making high speed semiconductor device having a silicon-on-insulator structure 144 1988
 
Semiconductor Energy Laboratory Co., Ltd. (4)
5643826 Method for manufacturing a semiconductor device 1316 1994
5923962 Method for manufacturing a semiconductor device 957 1995
5818076 Transistor and semiconductor device 121 1996
5949107 Semiconductor device and method of fabricating same 134 1996
 
MITSUBISHI DENKI KABUSHIKI KAISHA (3)
5146291 MIS device having lightly doped drain structure 75 1989
5217913 Method of manufacturing an MIS device having lightly doped drain structure and conductive sidewall spacers 35 1992
5854509 Method of fabricating semiconductor device and semiconductor device 45 1996
 
KABUSHIKI KAISHA TOSHIBA (1)
4857986 Short channel CMOS on 110 crystal plane 90 1986
 
PROMOS TECHNOLOGIES INC. (1)
* 5926712 Process for fabricating MOS device having short channel 11 1996
 
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (1)
* 6031268 Complementary semiconductor device and method for producing the same 10 1998
 
CANON KABUSHIKI KAISHA (1)
5854123 Method for producing semiconductor substrate 314 1996
* Cited By Examiner

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
RENESAS TECHNOLOGY CORP. (1)
* 2003/0220,770 Design rule generating system 4 2002
 
INTEL CORPORATION (3)
* 7312485 CMOS fabrication process utilizing special transistor orientation 8 2000
* 2002/0063,292 CMOS fabrication process utilizing special transistor orientation 24 2000
7888710 CMOS fabrication process utilizing special transistor orientation 1 2007
 
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (2)
* 7164189 Slim spacer device and manufacturing method 9 2004
* 2005/0224,867 Slim spacer device and manufacturing method 6 2004
 
Semiconductor Energy Laboratory Co., Ltd. (13)
* 2003/0178,682 Semiconductor device and method of manufacturing the semiconductor device 5 2002
* 7015141 Semiconductor device and manufacturing method thereof 30 2004
* 2004/0214,439 Semiconductor device and manufacturing method thereof 2 2004
7745293 Method for manufacturing a thin film transistor including forming impurity regions by diagonal doping 2 2005
7504327 Method of manufacturing thin film semiconductor device 6 2005
* 2005/0274,952 Semiconductor device and manufacturing method thereof 3 2005
7573069 Semiconductor device and manufacturing method thereof 10 2006
* 2006/0121,736 Semiconductor device and manufacturing method thereof 9 2006
7858987 Semiconductor device and manufacturing method thereof 10 2009
8097884 Semiconductor device and manufacturing method thereof 10 2010
8748898 Semiconductor device and manufacturing method thereof 1 2011
* 9660159 Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof 0 2013
* 2013/0126,883 Wiring Material, Semiconductor Device Provided with a Wiring Using the Wiring Material and Method of Manufacturing Thereof 1 2013
 
RENESAS ELECTRONICS CORPORATION (2)
7964921 MOSFET and production method of semiconductor device 0 2006
* 2009/0250,771 Mosfet and production method of semiconductor device 4 2006
* Cited By Examiner