Semiconductor device and process for producing the same
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United States of America Patent
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May 24, 2005
Grant Date -
N/A
app pub date -
Feb 2, 1999
filing date -
Feb 12, 1998
priority date (Note) -
Expired
status (Latency Note)
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Abstract
To provide a semiconductor device that can effectively suppress the short channel effect without deterioration of carrier migration, an impurity ion is added from a direction of the <110> axis with respect to a silicon substrate on forming a punch through stopper under the gate electrode. In this invention, because the addition of the impurity is conducted by utilizing the principal of channeling, the impurity can be added a small amount of scattering suppressing damages on the surface of the silicon substrate. A channel forming region having an extremely small impurity concentration and substantially no crystallinity disorder is formed.
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