US Patent No: 6,897,526
Number of patents in Portfolio can not be more than 2000
Semiconductor device and process for producing the same
Stats
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May 24, 2005
Issued date -
Feb 2, 1999
filing date -
09/241,695
serial no -
In Force
status
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Abstract
To provide a semiconductor device that can effectively suppress the short channel effect without deterioration of carrier migration, an impurity ion is added from a direction of the <110> axis with respect to a silicon substrate on forming a punch through stopper under the gate electrode. In this invention, because the addition of the impurity is conducted by utilizing the principal of channeling, the impurity can be added a small amount of scattering suppressing damages on the surface of the silicon substrate. A channel forming region having an extremely small impurity concentration and substantially no crystallinity disorder is formed.
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First Claim
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International Classification(s)
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Cited Art
| Patent Info | (Count) | # Cites | Year |
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| 5,643,826 Method for manufacturing a semiconductor device | 1140 | 1994 | |
| 5,923,962 Method for manufacturing a semiconductor device | 812 | 1995 | |
| 5,818,076 Transistor and semiconductor device | 116 | 1996 | |
| 5,949,107 Semiconductor device and method of fabricating same | 110 | 1996 | |
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| 5,146,291 MIS device having lightly doped drain structure | 71 | 1989 | |
| 5,217,913 Method of manufacturing an MIS device having lightly doped drain structure and conductive sidewall spacers | 33 | 1992 | |
| 5,854,509 Method of fabricating semiconductor device and semiconductor device | 41 | 1996 | |
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| 5,650,340 Method of making asymmetric low power MOS devices | 76 | 1995 | |
| 6,093,951 MOS devices with retrograde pocket regions | 40 | 1997 | |
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| 4,993,298 Apparatus for mounting a notching blade | 5 | 1989 | |
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| 5,854,123 Method for producing semiconductor substrate | 223 | 1996 | |
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| 4,933,298 Method of making high speed semiconductor device having a silicon-on-insulator structure | 129 | 1988 | |
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| 4,768,076 Recrystallized CMOS with different crystal planes | 100 | 1985 | |
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| 6,083,794 Method to perform selective drain engineering with a non-critical mask | 27 | 1997 | |
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| 5,945,972 Display device | 154 | 1996 | |
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| 4,857,986 Short channel CMOS on 110 crystal plane | 75 | 1986 | |
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| 5,563,928 Method and apparatus for optimizing the performance of digital systems | 39 | 1995 | |
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| 6,031,268 Complementary semiconductor device and method for producing the same | 7 | 1998 | |
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| 5,877,070 Method for the transfer of thin layers of monocrystalline material to a desirable substrate | 334 | 1997 | |
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| 5,893,740 Method of forming a short channel field effect transistor | 28 | 1997 | |
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| 5,926,712 Process for fabricating MOS device having short channel | 11 | 1996 | |
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| 5,793,073 Semiconductor thin film sensor device with (110) plane | 32 | 1996 | |
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| 5,882,987 Smart-cut process for the production of thin semiconductor material films | 293 | 1997 | |
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| 5,899,711 Method for enhancing hydrogenation of thin film transistors using a metal capping layer and method for batch hydrogenation | 22 | 1996 | |
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| 5,686,321 Local punchthrough stop for ultra large scale integration devices | 18 | 1996 | |
Patent Citation Ranking
Maintenance Fees
| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 7.5 Year Payment | $3600.00 | $1800.00 | $900.00 | Nov 24, 2012 |
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Nov 24, 2016 |
| Fee | Large entity fee | small entity fee | micro entity fee |
|---|---|---|---|
| Surcharge - 7.5 year - Late payment within 6 months | $160.00 | $80.00 | $40.00 |
| Surcharge - 11.5 year - Late payment within 6 months | $160.00 | $80.00 | $40.00 |
| Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
| Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |