Deep wordline trench to shield cross coupling between adjacent cells for scaled NAND

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United States of America Patent

PATENT NO 6898121
SERIAL NO

10353570

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Abstract

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A NAND flash memory structure with a wordline or control gate that provides shielding from Yupin effect errors and generally from potentials in adjacent strings undergoing programming operations with significant variations in potential.

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Patent Owner(s)

Patent OwnerAddress
SANDISK TECHNOLOGIES LLC6900 DALLAS PARKWAY SUITE 325 PLANO TX 75024

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chien, Henry Manassas, VA 83 4477
Fong, Yupin Fremont, CA 49 5385

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