Film-forming surface reforming method and semiconductor device manufacturing method
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United States of America Patent
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May 31, 2005
Grant Date -
Oct 11, 2001
app pub date -
Mar 15, 2001
filing date -
Mar 31, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A film-forming surface reforming method includes the steps of bringing a gas or an aqueous solution containing ammonia, hydrazine, an amine, an amino compound or a derivative thereof into contact with the film-forming surface before an insulating film is formed on the film-forming surface, and bringing a gas or an aqueous solution containing Hydrogen peroxide, ozone, Oxygen, nitric acid, sulfuric acid or a derivative thereof into contact with the film-forming surface.
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