Semiconductor package having filler metal of gold/silver/copper alloy
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United States of America Patent
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May 31, 2005
Grant Date -
Nov 25, 2004
app pub date -
May 21, 2003
filing date -
May 21, 2003
priority date (Note) -
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status (Latency Note)
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Abstract
A semiconductor package to which a potential difference is applied has two or more of the components thereof bound together using a filler metal. The filler metal is a solid solution structure in which the metallic components are atomically dispersed, and may comprise an alloy of gold, silver and copper. A preferred form of the filler metal comprises 60Au20Ag20Cu. Such filler metals in accordance with the invention provide the advantages of silver-based filler metals without the silver migration that leads to eventual shorting of the semiconductor package. When water condenses to form a continuous layer thereof within the semiconductor package due to moisture seeping into the package and temperature changes, the silver within the filler metal does not ionize, and therefore a buildup of silver deposits and eventual shorting of the package does not occur.
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