Probing of device elements
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United States of America Patent
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Jun 7, 2005
Grant Date -
Sep 16, 2004
app pub date -
Mar 11, 2003
filing date -
Mar 11, 2003
priority date (Note) -
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status (Latency Note)
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Abstract
A new and improved method for the probing of integrated circuits (ICs) and is particularly suitable for probing various elements of an IC for failure analysis or other electrical testing and/or measurement of the IC. The method includes providing a probe access trench in the IMD (intermetal dielectric) or other substrate adjacent to the circuit element to be tested and then providing direct electrical contact between the test probe and the sidewall of the element through the trench, during the testing process. Such direct electrical contact between the test probe and the sidewall of the element prevents excessively high contact resistance which may otherwise occur in the use of a probing pad between the test probe and the element.
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