Combined conformal/non-conformal seed layers for metallic interconnects
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United States of America Patent
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Jun 7, 2005
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Aug 14, 2003
filing date -
Oct 2, 1999
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Abstract
One embodiment of the present invention in a method for making copper interconnects, which method includes: (a) forming a patterned insulating layer on a substrate, the patterned insulating layer including at least one opening and a field surrounding the at least one opening; (b) depositing a barrier layer over the field and inside surfaces of the at least one opening; (c) depositing a non-conformal first copper seed layer over the barrier layer using physical vapor deposition, wherein the first seed layer is thicker than about 500 Å over the field; (d) depositing a conformal second copper seed layer over the first seed layer using chemical vapor deposition; and (e) electroplating a copper layer over the second seed layer.
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