Local dry etching method

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United States of America Patent

PATENT NO 6908566
APP PUB NO 20030199168A1
SERIAL NO

10419199

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Abstract

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In a local dry etching method, position-thickness data of a semiconductor wafer is previously obtained by measuring the wafer surface, components of position-thickness data shorter than a predetermined spatial wavelength are cut off by filtering and nozzle-wafer relative speed for planarizing the surface is calculated using the filtered data.

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Patent OwnerAddress
SPEEDFAM CO LTDJAPAN'S KANAGAWA COUNTY LAI LAI CITY FOUR 2 37 AIKAWA-SHI KANAGAWA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Tsuruoka, Kazuyuki Zama, JP 11 25
Yanagisawa, Michihiko Sagamihara, JP 28 215

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