Method for reducing the resistivity of p-type II-VI and III-V semiconductors
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United States of America Patent
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Jun 28, 2005
Grant Date -
Oct 23, 2003
app pub date -
Apr 19, 2002
filing date -
Apr 19, 2002
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Expired
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Abstract
The resistivity of a p-doped III-V or a p-doped II-VI semiconductor material is reduced. The reduction of resistivity of the p-type III-V or a II-VI semiconductor material is achieved by applying an electric field to the semiconductor material. III-V nitride-based light emitting diodes are prepared.
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