Semiconductor device and method of manufacturing the same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
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Jun 28, 2005
Grant Date -
Sep 5, 2002
app pub date -
Nov 20, 2001
filing date -
Nov 30, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A process gas consisting of one of N2, N2O or a mixture thereof is converted to a plasma and then a surface of a copper wiring layer is exposed to the plasma of the process gas, whereby a surface portion of the copper wiring layer is reformed and made into a copper diffusion preventing barrier. According to this method, a noble semiconductor device can be provided having increased operational speed and less copper diffusion.
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