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Abstract

To propose a new channel structure suitable for high efficiency source side injection, and provide a non-volatile semiconductor memory device and a charge injection method using the same. The non-volatile memory device includes a first conductivity type semiconductor substrate (SUB), a first conductivity type inversion layer-forming region (CH1), second conductivity type accumulation layer-forming regions (ACLa, ACL2b), second conductivity type regions (S/D1, S/D2), an insulating film (GD0) and a first conductive layer (CL) formed on the inversion layer-forming region (CH1). A charge accumulation film (GD) and a second conductive layer (WL) are stacked on an upper surface and side surface of the first conductive layer (CL), an exposure surface of the inversion layer-forming region (CH1), and an upper surface of the accumulation layer-forming regions (ACLa, ACLb) and the second conductivity type regions (S/D1, S/D2). The second conductive layer (WL) is connected to a word line and second conductivity type regions (S/D1, S/D2) are connected to bit lines (Bla, BLb).

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