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• 15 United States
• 10 France
• 8 Japan
• 7 China
• 5 Korea
• 2 Other

Patent Owner(s)

Patent Owner	Address
OVONYX MEMORY TECHNOLOGY LLC	1940 DUKE STREET SUITE 200 ALEXANDRIA VA 22314

International Classification(s)

• G11C:STATIC STORES

• [Classification Symbol]

• [Patents Count]

Inventor(s)

Inventor Name	Address	# of filed Patents	Total Citations
Gill, Manzur	Cupertino, CA	77	2863
Lowrey, Tyler	San Jose, CA	149	5841

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Maintenance Fees

Fee	Large entity fee	small entity fee	micro entity fee	due date

Fee	Large entity fee	small entity fee	micro entity fee
Surcharge after expiration - Late payment is unavoidable	$700.00	$350.00	$175.00
Surcharge after expiration - Late payment is unintentional	$1,640.00	$820.00	$410.00

DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
June 28, 2005	US,6912146,B2   US6912146B2	GRANTED PATENT AS SECOND PUBLICATION
June 17, 2004	US,20040113134,A1   US20040113134A1	FIRST PUBLISHED PATENT APPLICATION

Full Text

US Patent No: 6912146

Using an MOS select gate for a phase change memory

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