Cleaning and etching methods and their apparatuses
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United States of America Patent
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Jul 5, 2005
Grant Date -
Apr 15, 2004
app pub date -
Dec 17, 2001
filing date -
Dec 18, 2000
priority date (Note) -
In Force
status (Latency Note)
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Abstract
A cleaning method for removing fats, oils, and silicon small particles, which are conventionally difficult to remove, adhering to devices and carriers used to manufacture a semiconductor wafer or a semiconductor device. An etching method is also disclosed. XeF2 gas produced by sublimation is made to contact with an object to be cleaned in a vacuum atmosphere so as to decompose and gasify the oils and fats and to remove silicon small particles by etching. Prior to the cleaning, when a trace amount of residual water is left in the vacuum atmosphere, H2O reacts with XeF2, and HF is produced. For example, a native oxide SiO2 formed on the surface of silicon small particles can be removed, and XeF2 directly reacts with silicon, therby enabling etching. The cleaning etching rates are extremely high.
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