Sacrificial layers for use in fabrications of microelectromechanical devices
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United States of America Patent
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Jul 5, 2005
Grant Date -
Sep 30, 2004
app pub date -
Mar 28, 2003
filing date -
Mar 28, 2003
priority date (Note) -
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Abstract
A sacrificial layer and a method for applying said sacrificial layer in fabricating microelectromechanical devices are disclosed herein. The sacrificial layer comprises an early transition metal. Specifically, the sacrificial layer comprises an early transition metal element, an early transition metal alloy or an early transition metal silicide.
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